A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods
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- Yoshiyuki Takahashi
- Ehime University 1 Graduate School of Science and Engineering, , 3 Bunkyo-cho, Matsuyama 790-8577, Japan
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- Hiromichi Toyota
- Ehime University 1 Graduate School of Science and Engineering, , 3 Bunkyo-cho, Matsuyama 790-8577, Japan
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- Shinfuku Nomura
- Ehime University 1 Graduate School of Science and Engineering, , 3 Bunkyo-cho, Matsuyama 790-8577, Japan
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- Shinobu Mukasa
- Ehime University 1 Graduate School of Science and Engineering, , 3 Bunkyo-cho, Matsuyama 790-8577, Japan
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- Toru Inoue
- Ehime University 2 Geodynamics Research Center, , 2-5 Bunkyo-cho, Matsuyama 790-8577, Japan
説明
<jats:p>In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60–150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 105 (11), 113306-, 2009-06-01
AIP Publishing
