Fe 3 − x Zn x O 4 thin film as tunable high Curie temperature ferromagnetic semiconductor

  • Junichi Takaobushi
    Osaka University The Institute of Scientific and Industrial Research, , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Hidekazu Tanaka
    Osaka University The Institute of Scientific and Industrial Research, , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Tomoji Kawai
    Osaka University The Institute of Scientific and Industrial Research, , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Shigenori Ueda
    JASRI/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
  • Jung-Jin Kim
    JASRI/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
  • Masaaki Kobata
    JASRI/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
  • Eiji Ikenaga
    JASRI/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
  • Makina Yabashi
    JASRI/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
  • Keisuke Kobayashi
    JASRI/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
  • Yoshinori Nishino
    RIKEN/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
  • Daigo Miwa
    RIKEN/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
  • Kenji Tamasaku
    RIKEN/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
  • Tetsuya Ishikawa
    RIKEN/SPring-8 , 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan

書誌事項

公開日
2006-12-11
DOI
  • 10.1063/1.2405389
公開者
AIP Publishing

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説明

<jats:p>Epitaxial ferri(ferro)magnetic Fe3−xZnxO4 thin films (x=0–0.9) were prepared using a pulsed-laser deposition technique. The electrical conductivity and magnetic properties of Fe3−xZnxO4 thin film were systematically modulated for the entire range of Zn substitution. Anomalous Hall coefficient measurements revealed the presence of spin-polarized carriers at room temperature. Valence band spectra obtained by hard x-ray photoemission spectroscopy revealed that the density of states near the Fermi level was reduced with an increasing Zn concentration of x. These results indicate that this system will serve as a tunable ferromagnetic semiconductor with a strong electron correlation.</jats:p>

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