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- P. Görrn
- Technische Universität Institut für Hochfrequenztechnik, , Braunschweig, D-38106 Braunschweig, Germany
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- M. Lehnhardt
- Technische Universität Institut für Hochfrequenztechnik, , Braunschweig, D-38106 Braunschweig, Germany
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- T. Riedl
- Technische Universität Institut für Hochfrequenztechnik, , Braunschweig, D-38106 Braunschweig, Germany
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- W. Kowalsky
- Technische Universität Institut für Hochfrequenztechnik, , Braunschweig, D-38106 Braunschweig, Germany
書誌事項
- 公開日
- 2007-11-05
- DOI
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- 10.1063/1.2806934
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The characteristics of transparent zinc tin oxide thin film transistors (TTFTs) upon illumination with visible light are reported. Generally, a reversible decrease of threshold voltage Vth, saturation field effect mobility μsat, and an increase of the off current are found. The time scale of the recovery in the dark is governed by the persistent photoconductivity in the semiconductor. Devices with tuned [Zn]:[Sn] ratio show a shift of Vth of less 2V upon illumination at 5mW∕cm2 (brightness >30000cd∕m2) throughout the visible spectrum. These results demonstrate TTFTs which are candidates as pixel drivers in transparent active-matrix organic light emitting diode displays.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 91 (19), 193504-, 2007-11-05
AIP Publishing