Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

  • R. Kudrawiec
    Wrocław University of Technology 1 Institute of Physics, , 50-370 Wrocław, Poland
  • M. Syperek
    Wrocław University of Technology 1 Institute of Physics, , 50-370 Wrocław, Poland
  • P. Poloczek
    Wrocław University of Technology 1 Institute of Physics, , 50-370 Wrocław, Poland
  • J. Misiewicz
    Wrocław University of Technology 1 Institute of Physics, , 50-370 Wrocław, Poland
  • R. H. Mari
    University of Nottingham 2 School of Physics and Astronomy, , NG7 2RD Nottingham, United Kingdom
  • M. Shafi
    University of Nottingham 2 School of Physics and Astronomy, , NG7 2RD Nottingham, United Kingdom
  • M. Henini
    University of Nottingham 2 School of Physics and Astronomy, , NG7 2RD Nottingham, United Kingdom
  • Y. Galvão Gobato
    UFSCar 3 Departamento de Física, , 13565-905 São Carlos, São Paulo, Brazil
  • S. V. Novikov
    University of Nottingham 2 School of Physics and Astronomy, , NG7 2RD Nottingham, United Kingdom
  • J. Ibáñez
    Consell Superior d’Investigacions Científiques 4 Institut Jaume Almera, , 08028 Barcelona, Spain
  • M. Schmidbauer
    Institute for Crystal Growth 5 , D-12489 Berlin, Germany
  • S. I. Molina
    Universidad de Cadiz 6 Facultad de Ciencias, , 11510 Puerto Real, Cadiz, Spain

Description

<jats:p>The carrier localization phenomenon has been investigated for GaBiAs by photomodulated transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a decrease in the energy-gap related PT signal has been clearly observed below 180 K. In PL spectra a broad emission band very sensitive to the excitation power has been found. In comparison to the energy-gap related transition, this band is shifted to red. The recombination time for this band at low temperature decreases from 0.7 to 0.35 ns with the increase in the emission energy. All the findings are clear evidences for strong carrier localization in this alloy.</jats:p>

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