Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
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- R. Kudrawiec
- Wrocław University of Technology 1 Institute of Physics, , 50-370 Wrocław, Poland
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- M. Syperek
- Wrocław University of Technology 1 Institute of Physics, , 50-370 Wrocław, Poland
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- P. Poloczek
- Wrocław University of Technology 1 Institute of Physics, , 50-370 Wrocław, Poland
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- J. Misiewicz
- Wrocław University of Technology 1 Institute of Physics, , 50-370 Wrocław, Poland
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- R. H. Mari
- University of Nottingham 2 School of Physics and Astronomy, , NG7 2RD Nottingham, United Kingdom
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- M. Shafi
- University of Nottingham 2 School of Physics and Astronomy, , NG7 2RD Nottingham, United Kingdom
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- M. Henini
- University of Nottingham 2 School of Physics and Astronomy, , NG7 2RD Nottingham, United Kingdom
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- Y. Galvão Gobato
- UFSCar 3 Departamento de Física, , 13565-905 São Carlos, São Paulo, Brazil
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- S. V. Novikov
- University of Nottingham 2 School of Physics and Astronomy, , NG7 2RD Nottingham, United Kingdom
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- J. Ibáñez
- Consell Superior d’Investigacions Científiques 4 Institut Jaume Almera, , 08028 Barcelona, Spain
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- M. Schmidbauer
- Institute for Crystal Growth 5 , D-12489 Berlin, Germany
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- S. I. Molina
- Universidad de Cadiz 6 Facultad de Ciencias, , 11510 Puerto Real, Cadiz, Spain
Description
<jats:p>The carrier localization phenomenon has been investigated for GaBiAs by photomodulated transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a decrease in the energy-gap related PT signal has been clearly observed below 180 K. In PL spectra a broad emission band very sensitive to the excitation power has been found. In comparison to the energy-gap related transition, this band is shifted to red. The recombination time for this band at low temperature decreases from 0.7 to 0.35 ns with the increase in the emission energy. All the findings are clear evidences for strong carrier localization in this alloy.</jats:p>
Journal
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- Journal of Applied Physics
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Journal of Applied Physics 106 (2), 023518-, 2009-07-15
AIP Publishing
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Keywords
Details 詳細情報について
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- CRID
- 1362262945957184256
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- ISSN
- 10897550
- 00218979
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- Data Source
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- Crossref