Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation
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- C. A. Lin
- National Tsing Hua University 1 Department of Physics, , Hsinchu 30013, Taiwan
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- H. C. Chiu
- National Tsing Hua University 2 Department of Materials Science and Engineering, , Hsinchu 30013, Taiwan
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- T. H. Chiang
- National Tsing Hua University 2 Department of Materials Science and Engineering, , Hsinchu 30013, Taiwan
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- T. D. Lin
- National Tsing Hua University 2 Department of Materials Science and Engineering, , Hsinchu 30013, Taiwan
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- Y. H. Chang
- National Tsing Hua University 2 Department of Materials Science and Engineering, , Hsinchu 30013, Taiwan
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- W. H. Chang
- National Tsing Hua University 2 Department of Materials Science and Engineering, , Hsinchu 30013, Taiwan
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- Y. C. Chang
- National Tsing Hua University 2 Department of Materials Science and Engineering, , Hsinchu 30013, Taiwan
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- W.-E. Wang
- Interuniversity Microelectronics Center (IMEC vzw) 3 , 3001 Leuven, Belgium
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- J. Dekoster
- Interuniversity Microelectronics Center (IMEC vzw) 3 , 3001 Leuven, Belgium
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- T. Y. Hoffmann
- Interuniversity Microelectronics Center (IMEC vzw) 3 , 3001 Leuven, Belgium
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- M. Hong
- National Tsing Hua University 2 Department of Materials Science and Engineering, , Hsinchu 30013, Taiwan
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- J. Kwo
- National Tsing Hua University 1 Department of Physics, , Hsinchu 30013, Taiwan
書誌事項
- 公開日
- 2011-02-07
- DOI
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- 10.1063/1.3554375
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The pronounced high interfacial densities of states (Dit) commonly observed around the midgap energy of dielectric/GaAs interfaces are generally considered the culprit responsible for the poor electrical performance of the corresponding inversion-channel metal-oxide-semiconductor field-effect-transistors. In this work, comprehensive Dit spectra as the function of energy [Dit(E)] inside the In0.2Ga0.8As band gap were constructed by using the quasistatic capacitance-voltage and the temperature-dependent conductance method on n- and p-type ultrahigh vacuum (UHV)-Ga2O3(Gd2O3)/In0.2Ga0.8As and atomic-layer-deposited (ALD)-Al2O3/In0.2Ga0.8As metal-oxide-semiconductor capacitors. Unlike the ALD-Al2O3/In0.2Ga0.8As interface giving a Dit spectrum with a high midgap Dit peak, the UHV-Ga2O3(Gd2O3)/In0.2Ga0.8As interface shows a Dit spectrum that monotonically decreases from the valence band to the conduction band with no discernible midgap peak.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 98 (6), 2011-02-07
AIP Publishing