Structural properties of GaN films grown on sapphire by molecular beam epitaxy

  • Q. Zhu
    Physics Department, Brookhaven National Laboratory, Upton, New York 11973
  • A. Botchkarev
    Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
  • W. Kim
    Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
  • Ö. Aktas
    Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
  • A. Salvador
    Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
  • B. Sverdlov
    Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
  • H. Morkoç
    Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801
  • S.-C. Y. Tsen
    Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, Arizona 85287
  • David J. Smith
    Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, Arizona 85287

書誌事項

公開日
1996-02-19
DOI
  • 10.1063/1.115739
公開者
AIP Publishing

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説明

<jats:p>The structural characteristics of GaN films grown on sapphire substrates by molecular beam epitaxy have been investigated using high-resolution synchrotron x-ray diffraction and electron microscopy. We find remarkable correspondence between the in-plane structural order (coherence length and mosaic spread) and the electrical and optical properties. Contrary to common belief, our observations show unequivocally that the out-of-plane structural features, which are considerably better developed than the in-plane counterparts, cannot be used for determining the material quality with respect to their optical and electrical activity. In particular, the (00l) mosaic spread is not a good indicator of film quality.</jats:p>

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