Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

DOI PDF 2 Citations
  • Hee Jin Kim
    Georgia Institute of Technology 1 Center for Compound Semiconductors and School of Electrical and Computer Engineering, , 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA
  • Suk Choi
    Georgia Institute of Technology 1 Center for Compound Semiconductors and School of Electrical and Computer Engineering, , 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA
  • Seong-Soo Kim
    Georgia Institute of Technology 1 Center for Compound Semiconductors and School of Electrical and Computer Engineering, , 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA
  • Jae-Hyun Ryou
    Georgia Institute of Technology 1 Center for Compound Semiconductors and School of Electrical and Computer Engineering, , 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA
  • P. Douglas Yoder
    Georgia Institute of Technology 1 Center for Compound Semiconductors and School of Electrical and Computer Engineering, , 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA
  • Russell D. Dupuis
    Georgia Institute of Technology 1 Center for Compound Semiconductors and School of Electrical and Computer Engineering, , 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA
  • Alec M. Fischer
    Arizona State University 2 Department of Physics, , Tempe, Arizona 85287-1504, USA
  • Kewei Sun
    Arizona State University 2 Department of Physics, , Tempe, Arizona 85287-1504, USA
  • Fernando A. Ponce
    Arizona State University 2 Department of Physics, , Tempe, Arizona 85287-1504, USA

Bibliographic Information

Published
2010-03-08
DOI
  • 10.1063/1.3353995
Publisher
AIP Publishing

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<jats:p>Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.</jats:p>

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