Aluminum etching in boron tribromide plasmas

DOI PDF 被引用文献1件
  • A. Landauer Keaton
    Department of Chemical Engineering, University of California, Berkeley, California 94720
  • D. W. Hess
    Department of Chemical Engineering, University of California, Berkeley, California 94720

書誌事項

公開日
1985-05-01
DOI
  • 10.1116/1.573361
公開者
American Vacuum Society

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説明

<jats:p>Aluminum etching in BBr3 plasmas was characterized by studying the etch rates of aluminum and native aluminum oxide films as functions of electrode temperature, reactant flow rate, and rf power in a parallel plate plasma etcher. For comparison, BCl3 etch data were also determined. Reproducible, controllable, residue-free aluminum etching in BBr3 plasmas was achieved with aluminum etch rates of 1.5 nm/s at 40 °C and 0.31 W/cm2. The most significant difference between BBr3 and BCl3 etchants was the temperature dependence of the native oxide etch rate. For BBr3 on anodized aluminum electrodes, the apparent activation energy was 0.08 eV/molecule, a factor of ∼4 higher than in BCl3; this difference was attributed to different rate-controlling steps in the reaction sequence. The activation energy for aluminum etching was 0.01 eV/molecule, essentially the same as that obtained for BCl3 plasmas.</jats:p>

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