Realizing High Thermoelectric Performance in n‐Type Highly Distorted Sb‐Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects

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  • Xiao‐Lei Shi
    Materials Engineering The University of Queensland Brisbane Queensland 4072 Australia
  • Kun Zheng
    Institute of Microstructure and Properties of Advanced Materials Beijing University of Technology Beijing 100022 China
  • Wei‐Di Liu
    Materials Engineering The University of Queensland Brisbane Queensland 4072 Australia
  • Yuan Wang
    Centre for Future Materials University of Southern Queensland Springfield Queensland 4300 Australia
  • Yu‐Zhe Yang
    Materials Engineering The University of Queensland Brisbane Queensland 4072 Australia
  • Zhi‐Gang Chen
    Materials Engineering The University of Queensland Brisbane Queensland 4072 Australia
  • Jin Zou
    Materials Engineering The University of Queensland Brisbane Queensland 4072 Australia

抄録

<jats:title>Abstract</jats:title><jats:p>In this study, a record high figure of merit (<jats:italic>ZT</jats:italic>) of ≈1.1 at 773 K is reported in n‐type highly distorted Sb‐doped SnSe microplates via a facile solvothermal method. The pellets sintered from the Sb‐doped SnSe microplates show a high power factor of ≈2.4 µW cm<jats:sup>−1</jats:sup> K<jats:sup>−2</jats:sup> and an ultralow thermal conductivity of ≈0.17 W m<jats:sup>−1</jats:sup> K<jats:sup>−1</jats:sup> at 773 K, leading a record high <jats:italic>ZT</jats:italic>. Such a high power factor is attributed to a high electron concentration of 3.94 × 10<jats:sup>19</jats:sup> cm<jats:sup>−3</jats:sup> via Sb‐enabled electron doping, and the ultralow thermal conductivity derives from the enhanced phonon scattering at intensive crystal defects, including severe lattice distortions, dislocations, and lattice bent, observed by detailed structural characterizations. This study fills in the gaps of fundamental doping mechanisms of Sb in SnSe system, and provides a new perspective to achieve high thermoelectric performance in n‐type polycrystalline SnSe.</jats:p>

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