Monolayer graphene growth using additional etching process in atmospheric pressure chemical vapor deposition

Details 詳細情報について

• CRID

  1362544419285520768

• DOI

  10.1016/j.carbon.2012.07.003

• ISSN

  00086223

• Web Site

  https://api.elsevier.com/content/article/PII:S0008622312005829?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:S0008622312005829?httpAccept=text/plain

• Data Source

  • Crossref