Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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- T. Dietl
- Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan.
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- H. Ohno
- Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan.
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- F. Matsukura
- Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan.
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- J. Cibert
- Laboratoire de Spectrométrie Physique, Université Joseph Fourier Grenoble 1-CNRS (UMR 5588), F-38402 Saint Martin d'Hères Cedex, France.
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- D. Ferrand
- Laboratoire de Spectrométrie Physique, Université Joseph Fourier Grenoble 1-CNRS (UMR 5588), F-38402 Saint Martin d'Hères Cedex, France.
説明
<jats:p> Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature ( <jats:italic>T</jats:italic> <jats:sub>C</jats:sub> ) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain <jats:italic>T</jats:italic> <jats:sub>C</jats:sub> of Ga <jats:sub>1−</jats:sub> <jats:sub> <jats:italic>x</jats:italic> </jats:sub> Mn <jats:sub> <jats:italic>x</jats:italic> </jats:sub> As and that of its II-VI counterpart Zn <jats:sub>1−</jats:sub> <jats:sub> <jats:italic>x</jats:italic> </jats:sub> Mn <jats:sub> <jats:italic>x</jats:italic> </jats:sub> Te and is used to predict materials with <jats:italic>T</jats:italic> <jats:sub>C</jats:sub> exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin. </jats:p>
収録刊行物
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- Science
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Science 287 (5455), 1019-1022, 2000-02-11
American Association for the Advancement of Science (AAAS)
