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Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs
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Journal
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- IEEE Transactions on Electron Devices
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IEEE Transactions on Electron Devices 58 (10), 3541-3548, 2011-10
Institute of Electrical and Electronics Engineers (IEEE)
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Details 詳細情報について
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- CRID
- 1362544419931292544
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- ISSN
- 15579646
- 00189383
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- Data Source
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- Crossref
