SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin films

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Abstract Gallium nitride thin films were deposited on sapphire or zinc oxide substrates with a molecular beam epitaxial method. Thin films with a Ga 14 N/Ga 15 N/Ga 14 N isotopic heterostructure were also grown. A CAMECA-type secondary ion mass spectrometry (SIMS) was employed to analyze impurities such as substrate elements. Nitrogen isotopes were also analyzed. Some samples were annealed in a nitrogen atmosphere, and the diffusivities of the elements and isotopes were evaluated. Although the crater surface after using Cs + ions as the primary ion beam became smoother than after using O 2 + , preferential sputtering was observed. It is concluded that this preferential sputtering causes the isotope distribution to be abnormal. Elements of the substrates diffused into the thin films.

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