Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
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- Peder Bergman
- Linköping University
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- I.D. Booker
- Linköping University
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- Louise Lilja
- Linköping University
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- Jawad Hassan
- Linköping University
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- Erik Janzén
- Linköping University
書誌事項
- 公開日
- 2012-05-14
- 権利情報
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- https://www.scientific.net/PolicyAndEthics/PublishingPolicies
- https://www.scientific.net/license/TDM_Licenser.pdf
- DOI
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- 10.4028/www.scientific.net/msf.717-720.289
- 公開者
- Trans Tech Publications, Ltd.
説明
<jats:p>In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers. Also, local variations in carrier lifetime are different from standard off-cut epilayers. The properties of layers were studied with more focus on charge carrier lifetime and its correlation with starting growth conditions, in-homogeneous surface morphology and different growth mechanisms.</jats:p>
収録刊行物
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- Materials Science Forum
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Materials Science Forum 717-720 289-292, 2012-05-14
Trans Tech Publications, Ltd.