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- H. C. Liu
- Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
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- M. Gao
- Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
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- J. McCaffrey
- Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
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- Z. R. Wasilewski
- Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
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- S. Fafard
- Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
抄録
<jats:p>Self-assembled strained semiconductor nanostructures have been grown on GaAs substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence experiments have been used to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic intersublevel energy spacing which was adjusted to ∼60 meV. The lower electronic shells were populated with carriers by n doping the heterostructure, and transitions from the occupied quantum dot states to the wetting layer or to the continuum states resulted in infrared photodetection. We demonstrate broadband normal-incidence detection with a responsivity of a few hundred mA/W at a detection wavelength of ∼5 μm.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 78 (1), 79-81, 2001-01-01
AIP Publishing