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- J. D. Ye
- Nanjing University Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, , Nanjing 210093, People’s Republic of China
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- S. L. Gu
- Nanjing University Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, , Nanjing 210093, People’s Republic of China
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- S. M. Zhu
- Nanjing University Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, , Nanjing 210093, People’s Republic of China
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- W. Liu
- Nanjing University Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, , Nanjing 210093, People’s Republic of China
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- S. M. Liu
- Nanjing University Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, , Nanjing 210093, People’s Republic of China
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- R. Zhang
- Nanjing University Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, , Nanjing 210093, People’s Republic of China
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- Y. Shi
- Nanjing University Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, , Nanjing 210093, People’s Republic of China
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- Y. D. Zheng
- Nanjing University Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, , Nanjing 210093, People’s Republic of China
書誌事項
- 公開日
- 2006-05-01
- DOI
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- 10.1063/1.2201895
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The distinct visible electroluminescence (EL) at room temperature has been realized based on n-ZnO∕p-Si heterojunction. The EL peak energy coincided well with the deep-level photoluminescence of ZnO, suggesting that the EL emission was originated from the radiative recombination via deep-level defects in n-ZnO layers. The transport mechanisms of the diodes have been discussed with the characteristics of current-voltage (I-V) and light-output–voltage (L-V), in terms of the energy band diagram of ZnO∕Si heterojunction. The tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space-charge-limited current conduction dominated the carrier transport at higher bias. Light-output–current (L-I) characteristic of the diode followed a power law such as L∼Im, which showed a superlinear behavior at low injection current and became almost linear due to the saturation of nonradiative recombination centers at high current level.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 88 (18), 182112-, 2006-05-01
AIP Publishing