Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine

DOI PDF 被引用文献1件
  • J. Kouvetakis
    IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • V. V. Patel
    IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • C. W. Miller
    IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • D. B. Beach
    IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

書誌事項

公開日
1990-11-01
DOI
  • 10.1116/1.576423
公開者
American Vacuum Society

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説明

<jats:p>The composition and structure of boron nitride films prepared by thermal and plasma enhanced chemical vapor deposition (CVD) using borazine as a precursor have been studied. Thermal CVD at temperatures between 475 and 550 °C using either a hot-wall or cold-wall reactor results in amorphous boron-rich films of approximate composition BN0.67. Plasma enhanced CVD consistently gives films of 1:1 boron to nitrogen stoichiometry, but the hydrogen content of films deposited below 300 °C is so high that the films react with atmospheric moisture. Optimum conditions for the growth of stoichiometric BN with relatively low hydrogen content were found to be low plasma power, hydrogen–borazine gas mixtures, and a substrate temperature of 550 °C. Films deposited under these conditions are mixtures of poorly crystalline hexagonal and cubic boron nitride.</jats:p>

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