Ferroelectric field effect in ultrathin SrRuO3 films

DOI PDF 被引用文献7件
  • C. H. Ahn
    Department of Applied Physics, Stanford University, Stanford, California 94305
  • R. H. Hammond
    Department of Applied Physics, Stanford University, Stanford, California 94305
  • T. H. Geballe
    Department of Applied Physics, Stanford University, Stanford, California 94305
  • M. R. Beasley
    Department of Applied Physics, Stanford University, Stanford, California 94305
  • J.-M. Triscone
    DPMC University of Geneva, 1211 Geneva 4 Switzerland
  • M. Decroux
    DPMC University of Geneva, 1211 Geneva 4 Switzerland
  • O/. Fischer
    DPMC University of Geneva, 1211 Geneva 4 Switzerland
  • L. Antognazza
    Conductus Incorporated, Sunnyvale, California 94086
  • K. Char
    Conductus Incorporated, Sunnyvale, California 94086

書誌事項

公開日
1997-01-13
DOI
  • 10.1063/1.118203
公開者
AIP Publishing

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説明

<jats:p>We report the observation of a ferroelectric field effect in the conducting oxide SrRuO3 using Pb(Zr0.52Ti0.48)O3/SrRuO3 epitaxial heterostructures. Upon reversing the polarization of the ferroelectric Pb(Zr0.52Ti0.48)O3 layer, we measured a 9% change in the resistance of a nominally 30 Å SrRuO3 film at room temperature. This change was nonvolatile for a period of several days. Conductivity measurements taken between 4.2 and 300 K are consistent with n-type conduction throughout this temperature range. Hall effect measurements also yield n-type conduction, with n≈2×1022 electrons/cm3, and furthermore allow us to understand quantitatively the magnitude of the observed resistivity change.</jats:p>

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