Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

DOI PDF 被引用文献11件
  • L. T. Romano
    Xerox Palo Alto Research Center, Palo Alto, California 94304
  • C. G. Van de Walle
    Xerox Palo Alto Research Center, Palo Alto, California 94304
  • J. W. Ager
    Materials Sciences Division, Lawrence Berkeley National Laboratory, California 94720
  • W. Götz
    LumiLeds Lighting, San Jose, California 95131
  • R. S. Kern
    LumiLeds Lighting, San Jose, California 95131

書誌事項

公開日
2000-06-01
DOI
  • 10.1063/1.373529
公開者
AIP Publishing

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説明

<jats:p>The effect of Si doping on the strain and microstructure in GaN films grown on sapphire by metalorganic chemical vapor deposition was investigated. Strain was measured quantitatively by x-ray diffraction, Raman spectroscopy, and wafer curvature techniques. It was found that for a Si concentration of 2×1019 cm−3, the threshold for crack formation during film growth was 2.0 μm. Transmission electron microscopy and micro-Raman observations showed that cracking proceeds without plastic deformation (i.e., dislocation motion), and occurs catastrophically along the low energy {11_00} cleavage plane of GaN. First-principles calculations were used to show that the substitution of Si for Ga in the lattice causes only negligible changes in the lattice constant. The cracking is attributed to tensile stress in the film present at the growth temperature. The increase in tensile stress caused by Si doping is discussed in terms of a crystallite coalescence model.</jats:p>

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