Epitaxial Growth on Porous Si for a New Bond and Etchback Silicon‐on‐Insulator
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- Nobuhiko Sato
- Canon Incorporated, Device Development Center, Research and Development Headquarters, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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- Kiyofumi Sakaguchi
- Canon Incorporated, Device Development Center, Research and Development Headquarters, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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- Kenji Yamagata
- Canon Incorporated, Device Development Center, Research and Development Headquarters, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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- Yasutomo Fujiyama
- Canon Incorporated, Device Development Center, Research and Development Headquarters, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
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- Takao Yonehara
- Canon Incorporated, Device Development Center, Research and Development Headquarters, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
書誌事項
- 公開日
- 1995-09-01
- 権利情報
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- https://iopscience.iop.org/page/copyright
- https://iopscience.iop.org/info/page/text-and-data-mining
- DOI
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- 10.1149/1.2048698
- 公開者
- The Electrochemical Society
この論文をさがす
収録刊行物
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- Journal of The Electrochemical Society
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Journal of The Electrochemical Society 142 (9), 3116-3122, 1995-09-01
The Electrochemical Society