Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy

DOI PDF 被引用文献10件
  • Miftahul Anwar
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
  • Roland Nowak
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
  • Daniel Moraru
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
  • Arief Udhiarto
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
  • Takeshi Mizuno
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
  • Ryszard Jablonski
    Warsaw University of Technology 2 Division of Sensors and Measuring Systems, , Sw. A. Boboli 8, 02-525 Warsaw, Poland
  • Michiharu Tabe
    Shizuoka University 1 Research Institute of Electronics, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

書誌事項

公開日
2011-11-21
DOI
  • 10.1063/1.3663624
公開者
AIP Publishing

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説明

<jats:p>We have comparatively studied the effects of electron injection in individual phosphorus-donor potential wells at 13 K and 300 K by Kelvin probe force microscopy in silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. As a result, at 13 K, localized single-electron filling into the phosphorus-donor potential well is found, reflecting single-electron tunneling transport through individual donors, whereas at 300 K, spatially extended and continuous electron filling over a number of phosphorus-donors is observed, reflecting drift-diffusion transport.</jats:p>

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