Determination of absorption cross-section of Si nanocrystals by two independent methods based on either absorption or luminescence

  • J. Valenta
    Charles University 1 Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, , Ke Karlovu 3, 121 16 Prague 2, Czechia
  • M. Greben
    Charles University 1 Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, , Ke Karlovu 3, 121 16 Prague 2, Czechia
  • Z. Remeš
    Institute of Physics 2 , Academy of Sciences of the Czech Republic, Cukrovarnická 10, Prague 6, Czechia
  • S. Gutsch
    Albert-Ludwigs-University Freiburg 3 Faculty of Engineering, IMTEK, , Georges-Köhler-Allee 103, 79110 Freiburg, Germany
  • D. Hiller
    Albert-Ludwigs-University Freiburg 3 Faculty of Engineering, IMTEK, , Georges-Köhler-Allee 103, 79110 Freiburg, Germany
  • M. Zacharias
    Albert-Ludwigs-University Freiburg 3 Faculty of Engineering, IMTEK, , Georges-Köhler-Allee 103, 79110 Freiburg, Germany

書誌事項

公開日
2016-01-11
DOI
  • 10.1063/1.4939699
公開者
AIP Publishing

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説明

<jats:p>Absorption cross-section (ACS) of silicon nanocrystals (SiNCs) is determined via two completely independent approaches: (i) Excitation-intensity-dependent photoluminescence (PL) kinetics under modulated (long square pulses) pumping and (ii) absorbance measured by the photothermal deflection spectroscopy combined with morphology information obtained by the high-resolution transmission electron microscopy. This unique comparison reveals consistent ACS values around 10−15 cm2 for violet excitation of SiNCs of about 3–5 nm in diameter and this value is comparable to most of direct band-gap semiconductor nanocrystals; however, it decreases steeply towards longer wavelengths. Moreover, we analyze the PL-modulation technique in detail and propose an improved experimental procedure which enables simpler implementation of this method to determine ACS of various (nano)materials in both solid and liquid states.</jats:p>

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