Working Principles of Perovskite Photodetectors: Analyzing the Interplay Between Photoconductivity and Voltage‐Driven Energy‐Level Alignment

DOI Web Site Web Site 被引用文献2件
  • Konrad Domanski
    Group for Molecular Engineering of Functional Materials Institute of Chemical Science and Engineering École Polytechnique Fédérale de Lausanne Station 6 CH‐1015 Lausanne Switzerland
  • Wolfgang Tress
    Group for Molecular Engineering of Functional Materials Institute of Chemical Science and Engineering École Polytechnique Fédérale de Lausanne Station 6 CH‐1015 Lausanne Switzerland
  • Thomas Moehl
    Laboratory of Photonics and Interfaces Institute of Chemical Science and Engineering École Polytechnique Fédérale de Lausanne Station 6 CH‐1015 Lausanne Switzerland
  • Michael Saliba
    Group for Molecular Engineering of Functional Materials Institute of Chemical Science and Engineering École Polytechnique Fédérale de Lausanne Station 6 CH‐1015 Lausanne Switzerland
  • Mohammad Khaja Nazeeruddin
    Group for Molecular Engineering of Functional Materials Institute of Chemical Science and Engineering École Polytechnique Fédérale de Lausanne Station 6 CH‐1015 Lausanne Switzerland
  • Michael Grätzel
    Laboratory of Photonics and Interfaces Institute of Chemical Science and Engineering École Polytechnique Fédérale de Lausanne Station 6 CH‐1015 Lausanne Switzerland

書誌事項

公開日
2015-10-20
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/adfm.201503188
公開者
Wiley

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説明

<jats:p>Organic–inorganic lead halide perovskites have recently received significant attention as active materials for high‐performance photovoltaics and photodetectors. However, the understanding of their operation mechanism remains limited. High‐gain, low‐voltage CH<jats:sub>3</jats:sub>NH<jats:sub>3</jats:sub>PbI<jats:sub>3</jats:sub> photodetectors in various architectures are demonstrated herein. Photomultiplication in all structures with direct contact of fluorine‐doped tin oxide (FTO) and perovskite with the highest responsivity 208 A W<jats:sup>−1</jats:sup> corresponding to an incident photon‐to‐current efficiency of 47 000% is observed. Studying the dynamics and temperature dependence, a slow process with an activation energy of 420 ± 90 meV in the time scale of seconds is found, which is essential to photocurrent multiplication. A model based on ion migration to explain the observed transients and the photomultiplication is developed. The accumulation of negative ionic charge at the FTO/perovskite interface under reverse bias lowers the FTO work function allowing for direct hole injection into the perovskite valence band. Under illumination, the conductivity of perovskite is increased and the device behaves similar to a photoconductor.</jats:p>

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