Light-induced dangling bonds in hydrogenated amorphous silicon

DOI PDF 被引用文献27件
  • H. Dersch
    Fachbereich Physik, University of Marburg, Federal Republic of Germany
  • J. Stuke
    Fachbereich Physik, University of Marburg, Federal Republic of Germany
  • J. Beichler
    Fachbereich Physik, University of Marburg, Federal Republic of Germany

書誌事項

公開日
1981-03-15
DOI
  • 10.1063/1.92402
公開者
AIP Publishing

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説明

<jats:p>After intensive and long illumination of undoped a-Si:H samples the dark ESR signal is considerably enhanced. The g value of 2.0055 and the linewidth DHpp = 6–7 G leads to the conclusion that the light-induced defects are single dangling bonds. They disappear again by thermal anneal at about 220 °C.</jats:p>

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