Fabrication of artificial graphene in a GaAs quantum heterostructure

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  • Diego Scarabelli
    Columbia University Department of Applied Physics and Applied Mathematics, , 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
  • Sheng Wang
    Columbia University Department of Applied Physics and Applied Mathematics, , 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
  • Aron Pinczuk
    Columbia University Department of Applied Physics and Applied Mathematics, , 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
  • Shalom J. Wind
    Columbia University Department of Applied Physics and Applied Mathematics, , 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
  • Yuliya Y. Kuznetsova
    Columbia University Department of Physics, , 538 W. 120th St., 704 Pupin Hall MC 5255, New York, New York 10027
  • Loren N. Pfeiffer
    Princeton University Department of Electrical Engineering, , Olden Street, Princeton, New Jersey 08544
  • Ken West
    Princeton University Department of Electrical Engineering, , Olden Street, Princeton, New Jersey 08544
  • Geoff C. Gardner
    Purdue University Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, , 525 Northwestern Avenue, West Lafayette, Indiana 47907
  • Michael J. Manfra
    Purdue University Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, , 525 Northwestern Avenue, West Lafayette, Indiana 47907
  • Vittorio Pellegrini
    Istituto Italiano di Tecnologia Graphene Labs, , Via Morego 30, I-16163 Genova, Italy and , Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy

説明

<jats:p>The unusual electronic properties of graphene, which are a direct consequence of its two-dimensional honeycomb lattice, have attracted a great deal of attention in recent years. Creation of artificial lattices that re-create graphene's honeycomb topology, known as artificial graphene, can facilitate the investigation of graphenelike phenomena, such as the existence of massless Dirac fermions, in a tunable system. In this work, the authors present the fabrication of artificial graphene in an ultrahigh quality GaAs/AlGaAs quantum well, with lattice period as small as 50 nm, the smallest reported so far for this type of system. Electron-beam lithography is used to define an etch mask with honeycomb geometry on the surface of the sample, and different methodologies are compared and discussed. An optimized anisotropic reactive ion etching process is developed to transfer the pattern into the AlGaAs layer and create the artificial graphene. The achievement of such high-resolution artificial graphene should allow the observation for the first time of massless Dirac fermions in an engineered semiconductor.</jats:p>

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