Gas-phase nucleation during the thermal decomposition of silane in hydrogen
書誌事項
- 公開日
- 1976-04
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/0022-0248(76)90072-5
- 公開者
- Elsevier BV
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説明
Abstract Fine particles of silicon, 300 to 800 A in size, have been obtained by nucleation and postgrowth in gas-phase during the thermal decomposition of silane in hydrogen. This phenomenon of nucleation of silicon in gas-phase was found to occur at an input concentration of silane exceeding 0.2 vol% at 1100°C in a conventional horizontal epitaxial reactor. The size shape and structure of the particles have been investigated by electron microscopy. The particles were found to be single crystalline and mostly defect free with three kinds of crystal habits. Around 80% of the particles were found to be octahedral, followed by about 10% of tetrahedral and a smaller number of truncated triangular bipyramidal ones. The total amount of silicon converted to particles has been determined to increase with temperature and silane concentration and the growth process of the particles has been found to be diffusion controlled.
収録刊行物
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- Journal of Crystal Growth
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Journal of Crystal Growth 33 (1), 1-7, 1976-04
Elsevier BV
