InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates

DOI PDF 被引用文献12件
  • Shuji Nakamura
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Masayuki Senoh
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Shin-ichi Nagahama
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Naruhito Iwasa
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Takao Yamada
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Toshio Matsushita
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Hiroyuki Kiyoku
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Yasunobu Sugimoto
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Tokuya Kozaki
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Hitoshi Umemoto
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Masahiko Sano
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Kazuyuki Chocho
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

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<jats:p>After obtaining an epitaxially laterally overgrown GaN on sapphire by the metalorganic chemical vapor deposition method, GaN growth was continued up to a thickness of 200 μm by a hydride vapor phase epitaxy method. The InGaN multi-quantum-well-structure laser diode (LD) was grown on a free-standing GaN substrate, which was obtained by removing the sapphire substrate. The LDs with cleaved mirror facets showed an output power as high as 160 mW under room-temperature continuous-wave (CW) operation. The fundamental transverse mode was observed up to an output power of 80 mW. The lifetime of the LDs at a constant output power of 5 mW was about 180 h under CW operation at an ambient temperature of 50 °C, due to a high threshold current density of 14 kA/cm2.</jats:p>

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