Graphene integration with nitride semiconductors for high power and high frequency electronics
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- F. Giannazzo
- CNR-IMM, Strada VIII, 5; Zona Industriale; 95121 Catania Italy
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- G. Fisichella
- CNR-IMM, Strada VIII, 5; Zona Industriale; 95121 Catania Italy
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- G. Greco
- CNR-IMM, Strada VIII, 5; Zona Industriale; 95121 Catania Italy
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- A. La Magna
- CNR-IMM, Strada VIII, 5; Zona Industriale; 95121 Catania Italy
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- F. Roccaforte
- CNR-IMM, Strada VIII, 5; Zona Industriale; 95121 Catania Italy
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- B. Pecz
- Institute for Technical Physics and Materials Science Research; Centre for Energy Research; HAS Budapest Hungary
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- R. Yakimova
- Department of Physics, Chemistry and Biology; Linköping University; Linköping Sweden
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- R. Dagher
- CRHEA-CNRS; Rue Bernard Gregory; 06560 Valbonne France
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- A. Michon
- CRHEA-CNRS; Rue Bernard Gregory; 06560 Valbonne France
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- Y. Cordier
- CRHEA-CNRS; Rue Bernard Gregory; 06560 Valbonne France
書誌事項
- タイトル別名
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- Graphene integration with nitride semiconductors
- 公開日
- 2016-10-17
- 権利情報
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- http://doi.wiley.com/10.1002/tdm_license_1
- http://onlinelibrary.wiley.com/termsAndConditions
- DOI
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- 10.1002/pssa.201600460
- 公開者
- Wiley
この論文をさがす
収録刊行物
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- physica status solidi (a)
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physica status solidi (a) 214 (4), 1600460-, 2016-10-17
Wiley
