GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates
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- C. R. Miskys
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, Germany
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- M. K. Kelly
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, Germany
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- O. Ambacher
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, Germany
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- G. Martı́nez-Criado
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, Germany
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- M. Stutzmann
- Walter Schottky Institute, Technical University of Munich, Am Coulombwall, D-85748 Garching, Germany
書誌事項
- 公開日
- 2000-09-18
- DOI
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- 10.1063/1.1311596
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Lattice-matched GaN layers are grown by metalorganic chemical-vapor deposition on free-standing GaN substrates, which were fabricated by laser-induced liftoff of 300-μm-thick films grown by hydride vapor-phase epitaxy. Pretreatment of the free-standing films before the homoepitaxial growth of GaN involved mechanical polishing of the Ga-face surface and a final Cl-based plasma etch. By a combination of high-resolution x-ray diffraction, atomic-force microscopy, as well as Raman and photoluminescence spectroscopy, the structural and optical properties of the lattice-matched GaN layers are characterized. X-ray diffraction patterns of (0002), (0004), and (0006) reflexes with a full width at half maximum (FWHM) of as low as 20 arcsec are obtained. The dislocation density is determined to be 2×107 cm−2 and the surface morphology is dominated by bilayer steps with terraces of about 200 nm. The lattice mismatch between the GaN substrate and the homoepitaxial layer is below 3×10−5, resulting in a very narrow FWHM of the excitonic luminescence of 0.5 meV.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 77 (12), 1858-1860, 2000-09-18
AIP Publishing