A passivating contact for silicon solar cells formed during a single firing thermal annealing
書誌事項
- 公開日
- 2018-09-10
- 権利情報
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- https://www.springernature.com/gp/researchers/text-and-data-mining
- https://www.springernature.com/gp/researchers/text-and-data-mining
- DOI
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- 10.1038/s41560-018-0239-4
- 公開者
- Springer Science and Business Media LLC
説明
Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative passivating contact that is formed in a single post-deposition annealing step called ‘firing’, an essential step for current solar cell manufacturing. As firing is a fast ( 750 °C) anneal, the required microstructural and electrical properties of the passivating contact are stringent. We demonstrate that tuning the carbon content of boron-doped silicon-based thin films inhibits firing-induced layer delamination without preventing a partial crystallization. The latter promotes charge-carrier selectivity, even in the absence of a diffused doped region beyond the oxide, by inducing hole accumulation near the wafer surface. We fabricated proof-of-concept solar cells employing the developed technology, demonstrating an open circuit voltage of 698 mV and an efficiency of 21.9%, and show how it could be a drop-in replacement for today’s rear contacts based on locally opened dielectric passivation stacks.
収録刊行物
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- Nature Energy
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Nature Energy 3 (9), 800-808, 2018-09-10
Springer Science and Business Media LLC