Junction formation with pure and doped polyacetylene

DOI PDF 被引用文献5件
  • M. Ozaki
    Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104
  • D. L. Peebles
    Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104
  • B. R. Weinberger
    Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104
  • C. K. Chiang
    Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104
  • S. C. Gau
    Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104
  • A. J. Heeger
    Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104
  • A. G. MacDiarmid
    Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104

書誌事項

公開日
1979-07-01
DOI
  • 10.1063/1.90902
公開者
AIP Publishing

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説明

<jats:p>A variety of rectifying junctions have been fabricated using doped and undoped (CH)x. Schottky diodes formed between metallic AsF5-doped (CH)x and n-type semiconductors indicate high [CH(AsF5)y]x electronegativity. The p-type character of undoped trans- (CH)x is confirmed by Schottky-barrier formation with low-work-function metals. An undoped p- (CH)x : n-ZnS heterojunction has been demonstrated with an open-circuit voltage of 0.8 V. These results point to the potential of (CH)x as a photosensitive material for use in solar-cell applications.</jats:p>

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