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- Kang-Ill Seo
- Stanford University Department of Materials Science and Engineering, , Stanford, California 94305
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- Paul C. McIntyre
- Stanford University Department of Materials Science and Engineering, , Stanford, California 94305
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- Shiyu Sun
- Stanford Synchrotron Radiation Laboratory , Stanford, California 94305
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- Dong-Ick Lee
- Stanford Synchrotron Radiation Laboratory , Stanford, California 94305
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- Piero Pianetta
- Stanford Synchrotron Radiation Laboratory , Stanford, California 94305
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- Krishna C. Saraswat
- Stanford University Department of Electrical Engineering, , Stanford, California 94305
書誌事項
- 公開日
- 2005-07-20
- DOI
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- 10.1063/1.2006211
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>We report the chemical bonding structure and valence band alignment at the HfO2∕Ge(001) interface by systematically probing various core level spectra as well as valence band spectra using soft x rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO2 film using a dilute hydrogen fluoride solution. We found that a very nonstoichiometric GeOx layer exists at the HfO2∕Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeOx was determined to be ΔEv (Ge–GeOx)=2.2±0.15eV, and that between Ge and HfO2, ΔEv (Ge–HfO2)=2.7±0.15eV.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 87 (4), 042902-, 2005-07-20
AIP Publishing
