書誌事項
- 公開日
- 2007-03-23
- 権利情報
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- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
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- 10.1002/pssr.200701041
- 公開者
- Wiley
この論文をさがす
説明
<jats:title>Abstract</jats:title><jats:p>Transport measurements of p‐type <jats:italic>m</jats:italic> ‐plane GaN films grown on low extended‐defect density, free‐standing <jats:italic>m</jats:italic> ‐plane (10<jats:styled-content>$ \bar 1 $<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-1.gif" xlink:title="equation image" /></jats:styled-content>0) GaN substrates are presented. No significant anisotropy in in‐plane mobility was found for hole concentrations between 2.45 × 10<jats:sup>17</jats:sup> and 8.7 × 10<jats:sup>18</jats:sup> cm<jats:sup>–3</jats:sup>. Since faulted, heteroepitaxial <jats:italic>m</jats:italic> ‐plane films showed significant anisotropy in electron and hole mobility a microstructural feature with anisotropic distribution (basal plane stacking faults) is discussed as a possible source of anisotropic scattering in non‐polar and semi‐polar films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>
収録刊行物
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- physica status solidi (RRL) – Rapid Research Letters
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physica status solidi (RRL) – Rapid Research Letters 1 (3), 110-112, 2007-03-23
Wiley