Magnetotransport properties in epitaxial Fe3O4(001) thin films with current perpendicular to the plane geometry

H. Yanagihara, K. Shimada, T. Niizeki, E. Kita, J. Inoue, A. Fukushima, S. Yuasa

doi:10.1063/1.4795842

Magnetotransport properties in epitaxial Fe3O4(001) thin films with current perpendicular to the plane geometry

DOI PDF 被引用文献5件

H. Yanagihara

Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
K. Shimada

Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
T. Niizeki

Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
E. Kita

Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
J. Inoue

Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
A. Fukushima

Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST) 2 ,Tsukuba 305-8568, Japan
S. Yuasa

Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST) 2 ,Tsukuba 305-8568, Japan

抄録

<jats:p>We investigated the fundamental transport properties of epitaxial magnetite (Fe3O4) films with applied current perpendicular to the plane geometry. The devices with a junction area of 36 μm2 were fabricated with TiN/Fe3O4/ TM (TM: Ti and Fe) stacking. Both the temperature dependence and the magnetic field dependence of the junction resistance were measured. Most of the resistance properties were independent of whether the electrode was magnetic (Fe) or nonmagnetic (Ti). Below the Verwey point, the junction resistance abruptly increased with decreasing temperature, and the resistance reached maximum at approximately 30 K. The magnetoresistance showed a peak of ∼27% at T≈55 K. The observed resistance behavior was consistent with a hopping conduction mechanism with a Coulomb interaction.</jats:p>