Magnetotransport properties in epitaxial Fe3O4(001) thin films with current perpendicular to the plane geometry

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  • H. Yanagihara
    Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
  • K. Shimada
    Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
  • T. Niizeki
    Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
  • E. Kita
    Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
  • J. Inoue
    Institute of Applied Physics, University of Tsukuba 1 , Tsukuba 305-8573, Japan
  • A. Fukushima
    Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST) 2 ,Tsukuba 305-8568, Japan
  • S. Yuasa
    Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST) 2 ,Tsukuba 305-8568, Japan

Description

<jats:p>We investigated the fundamental transport properties of epitaxial magnetite (Fe3O4) films with applied current perpendicular to the plane geometry. The devices with a junction area of 36 μm2 were fabricated with TiN/Fe3O4/ TM (TM: Ti and Fe) stacking. Both the temperature dependence and the magnetic field dependence of the junction resistance were measured. Most of the resistance properties were independent of whether the electrode was magnetic (Fe) or nonmagnetic (Ti). Below the Verwey point, the junction resistance abruptly increased with decreasing temperature, and the resistance reached maximum at approximately 30 K. The magnetoresistance showed a peak of ∼27% at T≈55 K. The observed resistance behavior was consistent with a hopping conduction mechanism with a Coulomb interaction.</jats:p>

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