Wafer-level filling of microfabricated atomic vapor cells based on thin-film deposition and photolysis of cesium azide

Li-Anne Liew, John Moreland, Vladislav Gerginov

doi:10.1063/1.2712501

Wafer-level filling of microfabricated atomic vapor cells based on thin-film deposition and photolysis of cesium azide

DOI PDF 被引用文献2件

Li-Anne Liew

National Institute of Standards and Technology Electromagnetics Division, , Boulder, Colorado 80305
John Moreland

National Institute of Standards and Technology Electromagnetics Division, , Boulder, Colorado 80305
Vladislav Gerginov

National Institute of Standards and Technology Time and Frequency Division, , Boulder, Colorado 80305

書誌事項

公開日: 2007-03-12

DOI

10.1063/1.2712501

公開者: AIP Publishing

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説明

<jats:p>The thin-film deposition and photodecomposition of cesium azide are demonstrated and used to fill arrays of miniaturized atomic resonance cells with cesium and nitrogen buffer gas for chip-scale atomic-based instruments. Arrays of silicon cells are batch fabricated on wafers into which cesium azide is deposited by vacuum thermal evaporation. After vacuum sealing, the cells are irradiated with ultraviolet radiation, causing the azide to photodissociate into pure cesium and nitrogen in situ. This technology integrates the vapor-cell fabrication and filling procedures into one continuous and wafer-level parallel process, and results in cells that are optically transparent and chemically pure.</jats:p>