Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control

DOI PDF 被引用文献11件
  • Ranju Jung
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • Myoung-Jae Lee
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • Sunae Seo
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • Dong Chirl Kim
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • Gyeong-Su Park
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • Kihong Kim
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • Seungeon Ahn
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • Youngsoo Park
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • In-Kyeong Yoo
    Samsung Advanced Institute of Technology , Suwon 440-600, Korea
  • Jin-Soo Kim
    Konkuk University Department of Physics, , Seoul 143-701, Korea
  • Bae Ho Park
    Konkuk University Department of Physics, , Seoul 143-701, Korea

書誌事項

公開日
2007-07-09
DOI
  • 10.1063/1.2755712
公開者
AIP Publishing

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説明

<jats:p>Resistance change random access memory devices using NiOx films with resistance switching properties have immense potential for high-density nonvolatile memory exceeding currently used flash memory. The only critical failure of a NiOx film is to write wrong information due to large fluctuations of switching voltages during successive resistance switching operations. The authors show that failure-free NiOx film can be grown directly on Pt electrode just by process control. Intensive analyses show that the superior resistance switching behaviors of their simple Pt∕NiOx∕Pt structure may result from a very thin Ni–Pt layer self-formed at the bottom interface during deposition of NiOx.</jats:p>

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