Nitrogen implantation for molecular beam deposited CuInSe2 thin films

DOI PDF 被引用文献2件
  • Shigemi Kohiki
    Central Research Laboratories, Matsushita Electric Industrial Corporation, Ltd., Moriguchi, Osaka 570, Japan
  • Mikihiko Nishitani
    Central Research Laboratories, Matsushita Electric Industrial Corporation, Ltd., Moriguchi, Osaka 570, Japan
  • Takayuki Negami
    Central Research Laboratories, Matsushita Electric Industrial Corporation, Ltd., Moriguchi, Osaka 570, Japan
  • Kumiko Nishikura
    Central Research Laboratories, Matsushita Electric Industrial Corporation, Ltd., Moriguchi, Osaka 570, Japan
  • Takashi Hirao
    Central Research Laboratories, Matsushita Electric Industrial Corporation, Ltd., Moriguchi, Osaka 570, Japan

書誌事項

公開日
1991-09-30
DOI
  • 10.1063/1.106239
公開者
AIP Publishing

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説明

<jats:p>We have implanted N+ ions at an accelerating voltage of 10 kV and a dose of 5×1017 ions cm−2 in molecular beam deposited stoichiometric CuInSe2 thin films at various substrate temperatures (380, 515, 600, and 720 K). The conduction type of the films changed from n to p type when the substrate temperature was below 515 K during implantation. The conduction type was n type when the film temperature during implantation was above 600 K. The resistivity measured at 300 K was 1.07×104, 0.417, 0.653, 160, and 121 Ω cm for the films before implantation, implanted at 380, 515, 600, and 720 K, respectively. Both the conduction type and the resistivity of the films could be changed by N+ doping. Fabrication of homojunction diodes may be achieved in n-type CuInSe2 films by using the low energy nitrogen ion implantation.</jats:p>

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