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- Xiaolei Liu
- Department of Electrical Engineering–Electrophysics, University of Southern California, Los Angeles, California 90089
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- Chenglung Lee
- Department of Electrical Engineering–Electrophysics, University of Southern California, Los Angeles, California 90089
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- Chongwu Zhou
- Department of Electrical Engineering–Electrophysics, University of Southern California, Los Angeles, California 90089
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- Jie Han
- NASA Ames Research Center, Moffett Field, California 94035
書誌事項
- 公開日
- 2001-11-12
- DOI
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- 10.1063/1.1417516
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>This letter presents p-type metal–oxide–semiconductor (PMOS) and complementary metal–oxide–semiconductor (CMOS) inverters based on single-walled carbon nanotube field-effect transistors. The device structures consist of carbon nanotubes grown via a chemical-vapor deposition method and contacted by two metallic source/drain electrodes. Electrical properties of both p-type (without doping) and n-type nanotube transistors with potassium doping have been measured. By utilizing a resistor as the load for a p-type nanotube field-effect transistor, a PMOS inverter is demonstrated. Furthermore, by connecting a p-type nanotube transistor and an n-type nanotube transistor, a CMOS inverter is demonstrated. Both types of inverters exhibit nice transfer characteristics at room temperature. Our work represents one step forward toward integrated circuits based on nanoelectronic devices.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 79 (20), 3329-3331, 2001-11-12
AIP Publishing