A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
書誌事項
- 公開日
- 1980
- 権利情報
-
- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
-
- 10.1109/tns.1980.4331084
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Transactions on Nuclear Science
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IEEE Transactions on Nuclear Science 27 (6), 1651-1657, 1980
Institute of Electrical and Electronics Engineers (IEEE)
