Electrical transport properties and crystal structure of LiZnAs
書誌事項
- 公開日
- 1987-09-15
- 権利情報
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- http://link.aps.org/licenses/aps-default-license
- DOI
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- 10.1103/physrevb.36.4439
- 公開者
- American Physical Society (APS)
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説明
The first report on the electrical transport properties of LiZnAs is presented. LiZnAs, which has an antifluorite structure, is a p-type semiconductor with energy band gap of about 1.1 eV. The intrinsic region is found at temperatures above 450 K. The typical resistivity, Hall mobility, and carrier concentration at room temperature are of the order of ${10}^{\mathrm{\ensuremath{-}}1}$--10 \ensuremath{\Omega} cm, \ensuremath{\le}30 ${\mathrm{cm}}^{2}$/V sec, and ${10}^{17}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$, respectively. For some crystals the disordered structure between Li and Zn sites is observed, accompanied by a dip in resistivity around 350 K.
収録刊行物
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- Physical Review B
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Physical Review B 36 (8), 4439-4441, 1987-09-15
American Physical Society (APS)