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- Chang-Cheng Chuo
- Department of Electrical Engineering, National Central University, Chung-Li, Taiwan 32054, Republic of China
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- Chia-Ming Lee
- Department of Electrical Engineering, National Central University, Chung-Li, Taiwan 32054, Republic of China
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- Jen-Inn Chyi
- Department of Electrical Engineering, National Central University, Chung-Li, Taiwan 32054, Republic of China
書誌事項
- 公開日
- 2001-01-15
- DOI
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- 10.1063/1.1339991
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of ∼0.23 and ∼0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 78 (3), 314-316, 2001-01-15
AIP Publishing
