<i>In situ</i> probing electrical response on bending of ZnO nanowires inside transmission electron microscope

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  • K. H. Liu
    Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, , Beijing 100080, People’s Republic of China
  • P. Gao
    Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, , Beijing 100080, People’s Republic of China
  • Z. Xu
    Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, , Beijing 100080, People’s Republic of China
  • X. D. Bai
    Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, , Beijing 100080, People’s Republic of China
  • E. G. Wang
    Chinese Academy of Sciences Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, , Beijing 100080, People’s Republic of China

Abstract

<jats:p>In situ electrical transport measurements on individual bent ZnO nanowires have been performed inside a high-resolution transmission electron microscope, where the crystal structures of ZnO nanowires were simultaneously imaged. A series of consecutively recorded current-voltage (I-V) curves along with an increase in nanowire bending show the striking effect of bending on their electrical behavior. The bending-induced changes of resistivity, electron concentration, and carrier mobility of ZnO nanowires have been retrieved based on the experimental I-V data, which suggests the applications of ZnO nanowires as nanoelectromechanical sensors.</jats:p>

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