Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance
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- W. Hinsberg
- IBM Almaden Research Center, San Jose, California 95120
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- F. A. Houle
- IBM Almaden Research Center, San Jose, California 95120
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- J. Hoffnagle
- IBM Almaden Research Center, San Jose, California 95120
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- M. Sanchez
- IBM Almaden Research Center, San Jose, California 95120
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- G. Wallraff
- IBM Almaden Research Center, San Jose, California 95120
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- M. Morrison
- IBM Almaden Research Center, San Jose, California 95120
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- S. Frank
- IBM Almaden Research Center, San Jose, California 95120
書誌事項
- 公開日
- 1998-11-01
- DOI
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- 10.1116/1.590392
- 公開者
- American Vacuum Society
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説明
<jats:p>The precise control of the exposure step provided by interferometric photolithography facilitates studies of chemically amplified resist physics, chemistry, and functional properties that are difficult using more conventional exposure techniques. We describe here the design and operating characteristics of a deep-ultraviolet interferometric lithography tool designed specifically for the study of high resolution chemically amplified resists. We provide an example of its use to evaluate resist response to controlled variations in aerial image contrast.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 16 (6), 3689-3694, 1998-11-01
American Vacuum Society
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詳細情報 詳細情報について
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- CRID
- 1362825896124507392
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- NII論文ID
- 80010862609
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- DOI
- 10.1116/1.590392
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- ISSN
- 15208567
- 10711023
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- データソース種別
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