Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

DOI Web Site 7 Citations

Xin Li

Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
Suresh Sundaram

UMI 2958, Georgia Tech - CNRS, 57070 Metz, France
Youssef El Gmili

UMI 2958, Georgia Tech - CNRS, 57070 Metz, France
Taha Ayari

Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
Renaud Puybaret

Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
Gilles Patriarche

Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
Paul L. Voss

Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France
Jean Paul Salvestrini

UMI 2958, Georgia Tech - CNRS, 57070 Metz, France
Abdallah Ougazzaden

Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070 Metz, France

Journal

Crystal Growth & Design

Crystal Growth & Design 16 (6), 3409-3415, 2016-05-13

American Chemical Society (ACS)

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