Annealing behavior of implanted nitrogen in AISI 316 stainless steel

DOI PDF 被引用文献4件
  • J. Hirvonen
    Department of Physics, University of Helsinki, SF-00170 Helsinki, Finland
  • A. Anttila
    Department of Physics, University of Helsinki, SF-00170 Helsinki, Finland

書誌事項

公開日
1985-05-01
DOI
  • 10.1063/1.95901
公開者
AIP Publishing

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説明

<jats:p>The behavior of implanted nitrogen during post-implantation annealing has been studied at 400, 450, and 500 °C by depth profiling of 15N-implanted samples using the nuclear resonance broadening method. During the initial states of the annealing the nitrogen depth profiles behaved as if all the nitrogen would be able to diffuse, i.e., to be in solution, whereas for the longer annealing times the concentration of migrated nitrogen in the unimplanted region reached equilibrium with the implanted layer. The diffusion coefficients were determined as well as the equilibrium concentrations at the temperatures involved. The published values of the diffusion coefficients were extended to temperatures more than 500° C lower than before.</jats:p>

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