<i>p</i>-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy

DOI PDF 被引用文献1件
  • L. Svob
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 92195 Meudon Cedex, France
  • C. Thiandoume
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 92195 Meudon Cedex, France
  • A. Lusson
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 92195 Meudon Cedex, France
  • M. Bouanani
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 92195 Meudon Cedex, France
  • Y. Marfaing
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 92195 Meudon Cedex, France
  • O. Gorochov
    Laboratoire de Physique des Solides et de Cristallogénèse, CNRS, 92195 Meudon Cedex, France

書誌事項

公開日
2000-03-27
DOI
  • 10.1063/1.126139
公開者
AIP Publishing

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説明

<jats:p>ZnS layers were grown by metalorganic vapor phase epitaxy on GaAs substrates using diethylzinc, ditertiarybutyl sulphide, and triallylamine as organometallic sources. After postgrowth rapid thermal annealing, the ZnS layers showed p-type conductivity with hole concentrations up to 1018 cm−3. Photoluminescence measurements gave additional indications of the presence of electrically active nitrogen acceptors. In separate experiments, lithium was diffused from a LiH solid source into ZnS layers grown without the nitrogen precursor. High-conductivity p-type material was directly obtained with no need of thermal anneal.</jats:p>

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