Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy

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  • N. Tezuka
    Tohoku University Department of Materials Science, Graduate School of Engineering, , Aobayama 6-6-02, Sendai 980-8579, Japan
  • N. Ikeda
    Tohoku University Department of Materials Science, Graduate School of Engineering, , Aobayama 6-6-02, Sendai 980-8579, Japan
  • F. Mitsuhashi
    Tohoku University Department of Materials Science, Graduate School of Engineering, , Aobayama 6-6-02, Sendai 980-8579, Japan
  • S. Sugimoto
    Tohoku University Department of Materials Science, Graduate School of Engineering, , Aobayama 6-6-02, Sendai 980-8579, Japan

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<jats:p>The authors have developed a magnetic tunnel junction of Co2FeAl0.5Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2FeAl0.5Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.</jats:p>

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