High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
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- Jinqiao Xie
- Virginia Commonwealth University Department of Electrical and Computer Engineering, , Richmond, Virginia 23284, USA
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- Xianfeng Ni
- Virginia Commonwealth University Department of Electrical and Computer Engineering, , Richmond, Virginia 23284, USA
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- Mo Wu
- Virginia Commonwealth University Department of Electrical and Computer Engineering, , Richmond, Virginia 23284, USA
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- Jacob H. Leach
- Virginia Commonwealth University Department of Electrical and Computer Engineering, , Richmond, Virginia 23284, USA
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- Ümit Özgür
- Virginia Commonwealth University Department of Electrical and Computer Engineering, , Richmond, Virginia 23284, USA
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- Hadis Morkoç
- Virginia Commonwealth University Department of Electrical and Computer Engineering, , Richmond, Virginia 23284, USA
書誌事項
- 公開日
- 2007-09-24
- DOI
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- 10.1063/1.2794419
- 公開者
- AIP Publishing
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説明
<jats:p>High electron mobility was achieved in Al1−xInxN∕AlN∕GaN (x=0.20–0.12) heterostructure field effect transistors (HFETs) grown by metal-organic chemical vapor deposition. Reduction of In composition from 20% to 12% increased the room temperature equivalent two-dimensional-electron-gas density from 0.90×1013to1.64×1013cm−2 with corresponding electron mobilities of 1600 and 1410cm2∕Vs, respectively. The 10K mobility reached 17600cm2∕Vs for the nearly lattice-matched Al0.82In0.18N∕AlN∕GaN heterostructure with a sheet carrier density of 9.6×1012cm−2. For comparison, the AlInN∕GaN heterostructure without the AlN spacer exhibited a high sheet carrier density (2.42×1013cm−2) with low mobility (120cm2∕Vs) at room temperature. The high mobility in our samples is in part attributed to ∼1nm AlN spacer which significantly reduces the alloy scattering as well as provides a smooth interface. The HFETs having gate dimensions of 1.5×40μm2 and a 5μm source-drain separation exhibited a maximum transconductance of ∼200mS∕mm with good pinch-off characteristics and over 10GHz current gain cutoff frequency.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 91 (13), 132116-, 2007-09-24
AIP Publishing