The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

詳細情報 詳細情報について

• CRID

  1363107368559662336

• DOI

  10.1016/s0921-5107(96)01989-7

• ISSN

  09215107

• Web Site

  https://api.elsevier.com/content/article/PII:S0921510796019897?httpAccept=text/xml

  https://api.elsevier.com/content/article/PII:S0921510796019897?httpAccept=text/plain

• データソース種別

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